Method of fabricating array substrate, array substrate, and display apparatus

ABSTRACT

A method of fabricating an array substrate is provided. The method includes forming a plurality of first thin film transistors on a base substrate, a respective one of the plurality of first thin film transistors formed to include a first active layer, a first gate electrode, a first source electrode and a first drain electrode; and forming a plurality of second thin film transistors on the base substrate, a respective one of the plurality of second thin film transistors formed to include a second active layer, a second gate electrode, a second source electrode and a second drain electrode. Forming the first source electrode includes forming a first source sub-layer and forming a second source sub-layer in separate patterning steps. Forming the first drain electrode includes forming a first drain sub-layer and forming a second drain sub-layer in separate patterning steps.

CROSS-REFERENCE TO RELATED APPLICATION

This application is a national stage application under 35 U.S.C. § 371of International Application No. PCT/CN2019/082704, filed Apr. 15, 2019,the contents of which are incorporated by reference in the entirety.

TECHNICAL FIELD

The present invention relates to display technology, more particularly,to a method of fabricating an array substrate, an array substrate, and adisplay apparatus.

BACKGROUND

An array substrate typically includes a plurality of subpixels in itsdisplay area, each of the plurality of subpixels is controlled by a thinfilm transistor for image display. Various driving circuits of the arraysubstrate are typically disposed in a peripheral area of the arraysubstrate. These driving circuits also include thin film transistorsnecessary for their operation.

SUMMARY

In one aspect, the present invention provides a method of fabricating anarray substrate, comprising forming a plurality of first thin filmtransistors on a base substrate, a respective one of the plurality offirst thin film transistors formed to comprise a first active layer, afirst gate electrode, a first source electrode and a first drainelectrode; and forming a plurality of second thin film transistors onthe base substrate, a respective one of the plurality of second thinfilm transistors formed to comprise a second active layer, a second gateelectrode, a second source electrode and a second drain electrode;wherein forming the first source electrode comprises forming a firstsource sub-layer and forming a second source sub-layer in separatepatterning steps; forming the first drain electrode comprises forming afirst drain sub-layer and forming a second drain sub-layer in separatepatterning steps; the first source sub-layer and the first drainsub-layer are formed in a same layer using a same material in a samepatterning process and using a single mask plate; and the second sourcesub-layer, the second drain sub-layer, the second source electrode, andthe second drain electrode are formed in a same layer using a samematerial in a same patterning process and using a single mask plate.

Optionally, the first active layer and the second active layer areformed in different layers; an entire surface of the second active layeris protected and unexposed during a first etching process to expose afirst source electrode contact region and a first drain electrodecontact region of the first active layer; and an entire surface of thefirst active layer is protected and unexposed during a second etchingprocess to expose a second source electrode contact region and a seconddrain electrode contact region of the second active layer.

Optionally, the entire surface of the first active layer is unexposedand protected in part by the first source sub-layer and the first drainsub-layer during the second etching process; and the entire surface ofthe second active layer is unexposed and protected by an insulatingmaterial during the first etching process.

Optionally, the first etching process is performed prior to the secondetching process.

Optionally, the first active layer and the second active layer areformed as two different active layers selected from a silicon activelayer and a metal oxide active layer; the silicon active layer is formedby a crystallization process converting an amorphous silicon materialinto a polycrystalline silicon material; and an entire surface of themetal oxide active layer is protected and unexposed during thecrystallization process.

Optionally, the first active layer and the second active layer areformed in two different layers; the method further comprising forming afirst inter-layer dielectric layer and forming a second inter-layerdielectric layer; the first inter-layer dielectric layer is formedbetween the first active layer and the second active layer; and thesecond inter-layer dielectric layer is formed on a side of the firstactive layer and the second active layer away from the base substrate.

Optionally, the method comprises forming a first via and a second viaduring the first etching process to expose the first source electrodecontact region and the first drain electrode contact region of the firstactive layer; forming the first source sub-layer filling in the firstvia and the first drain sub-layer filling in the second via to protectthe first active layer; subsequent to forming the first source sub-layerand the first drain sub-layer, forming a third via and a fourth viaduring the second etching process to expose the second source electrodecontact region and the second drain electrode contact region of thesecond active layer; and forming the second source sub-layer, the seconddrain sub-layer, the second source electrode, and the second drainelectrode in a same patterning process, the second source electrodeformed to fill in the third via, the second drain electrode formed tofill in the fourth via.

Optionally, the first inter-layer dielectric layer is formed on a sideof the second active layer away from the base substrate; the firstactive layer is formed on a side of the first inter-layer dielectriclayer away from the base substrate; and the second inter-layerdielectric layer is formed on a side of the first active layer away fromthe base substrate.

Optionally, the method comprises forming a first via and a second viarespectively extending through the second inter-layer dielectric layerduring the first etching process to expose the first source electrodecontact region and the first drain electrode contact region of the firstactive layer; forming the first source sub-layer filling in the firstvia and the first drain sub-layer filling in the second via to protectthe first active layer; subsequent to forming the first source sub-layerand the first drain sub-layer, forming a third via and a fourth viarespectively extending through the first inter-layer dielectric layerand the second inter-layer dielectric layer during the second etchingprocess to expose the second source electrode contact region and thesecond drain electrode contact region of the second active layer; andforming the second source sub-layer, the second drain sub-layer, thesecond source electrode, and the second drain electrode in a samepatterning process, the second source electrode formed to fill in thethird via, the second drain electrode formed to fill in the fourth via.

Optionally, the first active layer is a metal oxide active layer and thesecond active layer is a silicon active layer; and subsequent to formingthe first source sub-layer and the first drain sub-layer, the methodfurther comprises performing a crystallization process to convert anamorphous silicon material into a polycrystalline silicon material,thereby forming the second active layer.

Optionally, the first inter-layer dielectric layer is formed on a sideof the second active layer away from the base substrate; the firstactive layer is formed on a side of the first inter-layer dielectriclayer away from the base substrate; and the second inter-layerdielectric layer is formed on a side of the first active layer away fromthe base substrate.

Optionally, the method comprises forming a first via and a second viarespectively extending through the first inter-layer dielectric layerand the second inter-layer dielectric layer during the first etchingprocess to expose the first source electrode contact region and thefirst drain electrode contact region of the first active layer; formingthe first source sub-layer filling in the first via and the first drainsub-layer filling in the second via to protect the first active layer;subsequent to forming the first source sub-layer and the first drainsub-layer, forming a third via and a fourth via respectively extendingthrough the second inter-layer dielectric layer during the secondetching process to expose the second source electrode contact region andthe second drain electrode contact region of the second active layer;and forming the second source sub-layer, the second drain sub-layer, thesecond source electrode, and the second drain electrode in a samepatterning process, the second source electrode formed to fill in thethird via, the second drain electrode formed to fill in the fourth via.

Optionally, the first active layer is a silicon active layer and thesecond active layer is a metal oxide active layer; and prior to formingthe third via and the fourth via, the method further comprisesperforming a crystallization process to convert an amorphous siliconmaterial into a polycrystalline silicon material, thereby forming thefirst active layer.

Optionally, the respective one of the plurality of first thin filmtransistors and the respective one of the plurality of second thin filmtransistors are formed as two different thin film transistors selectedfrom a silicon thin film transistor and a metal oxide thin filmtransistor; and the metal oxide thin film transistor is formed in adisplay area of the array substrate, and the silicon thin filmtransistor is formed in a peripheral area of the array substrate.

Optionally, the respective one of the plurality of first thin filmtransistors and the respective one of the plurality of second thin filmtransistors are formed as two different thin film transistors selectedfrom a silicon thin film transistor and a metal oxide thin filmtransistor; the silicon thin film transistor is formed as a drive thinfilm transistor electrically connected to a power supply line and anorganic light emitting diode; and the metal oxide thin film transistoris formed as a switch thin film transistor electrically connected to adata line and a gate electrode of the silicon thin film transistor.

Optionally, the first active layer is the metal oxide active layer, andthe second active layer is the silicon active layer.

Optionally, the first active layer is the silicon active layer, and thesecond active layer is the metal oxide active layer.

Optionally, the first source sub-layer and the first drain sub-layer areformed using a metallic material; and the second source sub-layer, thesecond drain sub-layer, the second source electrode, and the seconddrain electrode are formed using a metallic material.

In another aspect, the present invention provides an array substratefabricated by the method described herein.

In another aspect, the present invention provides a display apparatus,comprising an array substrate fabricated by the method described herein,and one or more integrated circuits connected to the array substrate.

BRIEF DESCRIPTION OF THE FIGURES

The following drawings are merely examples for illustrative purposesaccording to various disclosed embodiments and are not intended to limitthe scope of the present invention.

FIG. 1A is a schematic diagram illustrating the structure of an arraysubstrate in some embodiments according to the present disclosure.

FIG. 1B is a schematic diagram illustrating the structure of an arraysubstrate in some embodiments according to the present disclosure.

FIG. 1C is a schematic diagram illustrating the structure of an arraysubstrate in some embodiments according to the present disclosure.

FIGS. 2A to 2E illustrate a method of fabricating an array substrate insome embodiments according to the present disclosure.

FIG. 3A illustrates regions of a first active layer in some embodimentsaccording to the present disclosure.

FIG. 3B illustrates regions of a second active layer in some embodimentsaccording to the present disclosure.

FIGS. 4A to 4I illustrate a method of fabricating an array substrate insome embodiments according to the present disclosure.

FIGS. 5A to 5I illustrate a method of fabricating an array substrate insome embodiments according to the present disclosure.

DETAILED DESCRIPTION

The disclosure will now be described more specifically with reference tothe following embodiments. It is to be noted that the followingdescriptions of some embodiments are presented herein for purpose ofillustration and description only. It is not intended to be exhaustiveor to be limited to the precise form disclosed.

Low temperature polysilicon oxide technology combines advantages of lowtemperature polysilicon thin film transistors and metal oxide thin filmtransistors in an array substrate. In fabricating a low temperaturepolysilicon oxide array substrate, it is discovered in the presentdisclosure that the high temperature annealing process and the acidicetching process for forming the polysilicon thin film transistors oftendamage the metal oxide active layer, resulting in an inferior thin filmtransistor performance.

Accordingly, the present disclosure provides, inter alia, a method offabricating an array substrate, an array substrate, and a displayapparatus that substantially obviate one or more of the problems due tolimitations and disadvantages of the related art. In one aspect, thepresent disclosure provides a method of fabricating an array substrate.In some embodiments, the method includes forming a plurality of firstthin film transistors on a base substrate, a respective one of theplurality of first thin film transistors formed to include a firstactive layer, a first gate electrode, a first source electrode and afirst drain electrode; and forming a plurality of second thin filmtransistors on the base substrate, a respective one of the plurality ofsecond thin film transistors formed to include a second active layer, asecond gate electrode, a second source electrode and a second drainelectrode. Optionally, forming the first source electrode includesforming a first source sub-layer and forming a second source sub-layerin separate patterning steps. Optionally, forming the first drainelectrode includes forming a first drain sub-layer and forming a seconddrain sub-layer in separate patterning steps. Optionally, the firstsource sub-layer and the first drain sub-layer are formed in a samelayer using a same material in a same patterning process and using asingle mask plate. Optionally, the second source sub-layer, the seconddrain sub-layer, the second source electrode, and the second drainelectrode are formed in a same layer using a same material in a samepatterning process and using a single mask plate. Optionally, theplurality of first thin film transistors are a plurality of top-gatetype thin film transistors. Optionally, the plurality of first thin filmtransistors are a plurality of bottom-gate type thin film transistors.Optionally, the plurality of second thin film transistors are aplurality of top-gate type thin film transistors. Optionally, theplurality of second thin film transistors are a plurality of bottom-gatetype thin film transistors.

FIG. 1A is a schematic diagram illustrating the structure of an arraysubstrate in some embodiments according to the present disclosure.Referring to FIG. 1A, the array substrate in some embodiments includes aplurality of first thin film transistors 1 and a plurality of secondthin film transistors 2. The array substrate is formed to have a displayarea DA and a peripheral area PA. Optionally, the plurality of firstthin film transistors 1 are in the display area DA, and the plurality ofsecond thin film transistors 2 are in the peripheral area PA.Optionally, the array substrate includes an array of a matrix of aplurality of subpixels 11, and a respective one of the plurality offirst thin film transistors 1 is in one of the plurality of subpixels11, as shown in FIG. 1A. Optionally, the array substrate includes adisplay driver circuitry 12, and the display driver circuitry 12includes the plurality of second thin film transistors 2. Optionally,the display driver circuitry 12 is a gate-on-array circuit for driving aplurality of gate lines in the array substrate. Optionally, the displaydriver circuitry 12 is a demultiplexer circuit. Optionally, the arraysubstrate is a liquid crystal array substrate.

Optionally, a respective one of the plurality of first thin filmtransistors 1 is a thin film transistor having a metal oxide activelayer. Optionally, a respective one of the plurality of second thin filmtransistors 2 is a thin film transistor having a polycrystalline siliconactive layer.

Optionally, a respective one of the plurality of first thin filmtransistors 1 is a thin film transistor having a polycrystalline siliconactive layer. Optionally, a respective one of the plurality of secondthin film transistors 2 is a thin film transistor having a metal oxideactive layer.

As used herein, the term “peripheral area” refers to an area wherevarious circuits and wires are provided to transmit signals to the arraysubstrate. To increase the transparency of the display apparatus,non-transparent or opaque components of the display apparatus (e.g.,battery, printed circuit board, metal frame), can be disposed in theperipheral area rather than in the display areas. As used herein, theterm “display area” refers to an area of the array substrate where imageis actually displayed. Optionally, the display area may include both asubpixel region and an inter-subpixel region. A subpixel region refersto a light emission region of a subpixel, such as a region correspondingto a pixel electrode in a liquid crystal display or a regioncorresponding to a light emissive layer in an organic light emittingdiode display. An inter-subpixel region refers to a region betweenadjacent subpixel regions, such as a region corresponding to a blackmatrix in a liquid crystal display or a region corresponding a pixeldefinition layer in an organic light emitting diode display. Optionally,the inter-subpixel region is a region between adjacent subpixel regionsin a same pixel. Optionally, the inter-subpixel region is a regionbetween two adjacent subpixel regions from two adjacent pixels.

In some embodiments, the display area of the array substrate includesboth a plurality of first thin film transistors and a plurality ofsecond thin film transistors. FIG. 1B is a schematic diagramillustrating the structure of an array substrate in some embodimentsaccording to the present disclosure. Referring to FIG. 1B, the arraysubstrate in some embodiments includes a plurality of first thin filmtransistors 1 and a plurality of second thin film transistors 2, both ofwhich in the display area DA. In one example, the array substrateincludes an array of a matrix of a plurality of subpixels 11, arespective one of which includes at least one of the plurality of firstthin film transistors 1 and at least one of the plurality of second thinfilm transistors 2. Optionally, the array substrate is an organic lightemitting diode array substrate.

Optionally, a respective one of the plurality of first thin filmtransistors 1 is a thin film transistor having a metal oxide activelayer. Optionally, a respective one of the plurality of second thin filmtransistors 2 is a thin film transistor having a polycrystalline siliconactive layer.

Optionally, a respective one of the plurality of first thin filmtransistors 1 is a thin film transistor having a polycrystalline siliconactive layer. Optionally, a respective one of the plurality of secondthin film transistors 2 is a thin film transistor having a metal oxideactive layer.

Optionally, the plurality of first thin film transistors 1 are drivethin film transistors (e.g., transistors connected to the power supplyline and to the light emitting diode) in an organic light emitting diodearray substrate. Optionally, the plurality of second thin filmtransistors 2 are switch thin film transistors (e.g., transistorsconnected to data lines and the gate electrode of the drive transistors,i.e., address selection thin film transistors) in an organic lightemitting diode array substrate.

Optionally, the plurality of first thin film transistors 1 are switchthin film transistors (e.g., transistors connected to data lines and thegate electrode of the drive transistors, i.e., address selection thinfilm transistors) in an organic light emitting diode array substrate.Optionally, the plurality of second thin film transistors 2 are drivethin film transistors (e.g., transistors connected to the power supplyline and to the light emitting diode) in an organic light emitting diodearray substrate.

In some embodiments, the plurality of first thin film transistors are inthe display area, and the plurality of second thin film transistors arein the display area and the peripheral area. FIG. 1C is a schematicdiagram illustrating the structure of an array substrate in someembodiments according to the present disclosure. Referring to FIG. 1C,the array substrate in some embodiments includes a plurality of firstthin film transistors 1 and a plurality of second thin film transistors2. The peripheral area PA includes multiple second thin film transistorsof the plurality of second thin film transistors 2. The display area DAincludes the plurality of first thin film transistors 1 and multiplesecond thin film transistors of the plurality of second thin filmtransistors 2. In one example, the array substrate is an organic lightemitting diode array substrate. Optionally, the multiple second thinfilm transistors 2 in the peripheral area PA are thin film transistorsin the display driver circuitry 12, which is disposed in the peripheralarea PA.

Optionally, the plurality of first thin film transistors 1 are drivethin film transistors (e.g., transistors connected to the power supplyline and to the light emitting diode) in an organic light emitting diodearray substrate. Optionally, the multiple second thin film transistors 2in the display area DA are switch thin film transistors (e.g.,transistors connected to data lines and the gate electrode of the drivetransistors, i.e., address selection thin film transistors) in anorganic light emitting diode array substrate.

Optionally, the plurality of first thin film transistors 1 are switchthin film transistors (e.g., transistors connected to data lines and thegate electrode of the drive transistors, i.e., address selection thinfilm transistors) in an organic light emitting diode array substrate.Optionally, the multiple second thin film transistors 2 in the displayarea DA are drive thin film transistors (e.g., transistors connected tothe power supply line and to the light emitting diode) in an organiclight emitting diode array substrate.

FIGS. 2A to 2E illustrate a method of fabricating an array substrate insome embodiments according to the present disclosure. Referring to FIG.2E, the method includes forming a plurality of first thin filmtransistors 1 on a base substrate 10, and forming a plurality of secondthin film transistors 2 on the base substrate 10. A respective one ofthe plurality of first thin film transistors 1 is formed to include afirst active layer ACT1, a first gate electrode G1, a first sourceelectrode S1, and a first drain electrode D1. A respective one of theplurality of second thin film transistors 2 is formed to include asecond active layer ACT2, a second gate electrode G2, a second sourceelectrode S2 and a second drain electrode D2. A first gate insulatinglayer GI1 is formed between the first gate electrode G1 and the firstactive layer ACT1. A second gate insulating layer GI2 is formed betweenthe second gate electrode G2 and the second active layer ACT2.Optionally, the first active layer ACT1 and the second active layer ACT2are formed in different layers. Optionally, the first gate insulatinglayer GI1 and the second gate insulating layer GI2 are formed as twodifferent insulating layers. Optionally, the first gate electrode G1 andthe second gate electrode G2 are formed in different layers.

In some embodiments, the step of forming the first source electrode S1includes forming a first source sub-layer S1-1 and forming a secondsource sub-layer S1-2 in separate patterning steps, and the step offorming the first drain electrode D1 includes forming a first drainsub-layer D1-1 and forming a second drain sub-layer D1-2 in separatepatterning steps, as illustrated in FIGS. 2A to 2E. Optionally, thefirst source sub-layer S1-1 and the first drain sub-layer D1-1 areformed in a same layer using a same material in a same patterningprocess and using a single mask plate. Optionally, the second sourcesub-layer S1-2, the second drain sub-layer D1-2, the second sourceelectrode S2, and the second drain electrode D2 are formed in a samelayer using a same material in a same patterning process and using asingle mask plate.

As used herein, the term “same layer” refers to the relationship betweenthe layers simultaneously formed in the same step. In one example, thefirst source sub-layer S1-1 and the first drain sub-layer D1-1 are in asame layer when they are formed as a result of one or more steps of asame patterning process performed in a same layer of material. Inanother example, the first source sub-layer S1-1 and the first drainsub-layer D1-1 can be formed in a same layer by simultaneouslyperforming the step of forming the first source sub-layer S1-1 and thestep of forming the first drain sub-layer D1-1. The term “same layer”does not always mean that the thickness of the layer or the height ofthe layer in a cross-sectional view is the same.

Referring to FIG. 2A, top-gate type thin film transistors are depictedto illustrate the method. Specifically, a first active layer ACT1 isformed on a base substrate 10, a first gate insulating layer GI1 isformed on a side of the first active layer ACT1 away from the basesubstrate 10, and a first gate electrode G1 is formed on a side of thefirst gate insulating layer GI1 away from the first active layer ACT1. Asecond active layer ACT2 is formed on a base substrate 10, a second gateinsulating layer GI2 is formed on a side of the second active layer ACT2away from the base substrate 10, and a second gate electrode G2 isformed on a side of the second gate insulating layer GI2 away from thesecond active layer ACT2. Optionally, the first active layer ACT1 andthe second active layer ACT2 are formed in different layers.

Referring to FIG. 2B, a first etching process is performed to expose afirst source electrode contact region and a first drain electrodecontact region of the first active layer ACT1. Specifically, a first viaV1 and a second via V2 respectively corresponding to a first sourceelectrode contact region and a first drain electrode contact region ofthe first active layer ACT1 are formed to expose the first sourceelectrode contact region and the first drain electrode contact region ofthe first active layer ACT1. During the first etching process, an entiresurface of the second active layer ACT2 is protected and unexposed,e.g., by an insulating material. Because the second active layer ACT2 isprotected and unexposed during the first etching process, the secondactive layer ACT2 is not exposed to the etchant (e.g., an acidicetchant) used in the first etching process. Accordingly, the issue ofdamages caused by the etchant on the second active layer ACT2 can beobviated, resulting in a more stable active layer and enhancedperformance of the thin film transistor, particularly when the secondactive layer ACT2 is made of a metal oxide material.

Referring to FIG. 2C, a first source sub-layer S1-1 is formed to fill inthe first via V1 and a first drain sub-layer D1-1 is formed to fill inthe second via V2. Optionally, the first source sub-layer S1-1 is formedto be in direct contact with the first source electrode contact regionof the first active layer ACT1, and the first drain sub-layer D1-1 isformed to be in direct contact with the first drain electrode contactregion of the first active layer ACT1 to protect the first active layerACT1.

Referring to FIG. 2D, subsequent to forming the first source sub-layerS1-1 and the first drain sub-layer D1-1, a second etching process isthen performed to expose a second source electrode contact region and asecond drain electrode contact region of the second active layer ACT2.Specifically, a third via V3 and a fourth via V4 respectivelycorresponding to a second source electrode contact region and a seconddrain electrode contact region of the second active layer ACT2 areformed to expose the second source electrode contact region and thesecond drain electrode contact region of the second active layer ACT2.During the second etching process, an entire surface of the first activelayer ACT1 is protected and unexposed, e.g., in part by the first sourcesub-layer S1-1 and the first drain sub-layer D1-1. Because the firstactive layer ACT1 is protected and unexposed during the second etchingprocess, the first active layer ACT1 is not exposed to the etchant(e.g., an acidic etchant) used in the second etching process.Accordingly, the issue of damages caused by the etchant on the firstactive layer ACT1 can be obviated, resulting in a more stable activelayer and enhanced performance of the thin film transistor, particularlywhen the first active layer ACT1 is made of a metal oxide material.

Referring to FIG. 2E, subsequent to forming the third via V3 and thefourth via V4, a second source sub-layer S1-2, a second drain sub-layerD1-2, a second source electrode S2, and a second drain electrode D2 areformed in a same layer and in a same patterning process. The secondsource sub-layer S1-2 is formed on a side of the first source sub-layerS1-1 away from the base substrate 10 and optionally formed to be indirect contact with the first source sub-layer S1-1. The second drainsub-layer D1-2 is formed on a side of the first drain sub-layer D1-1away from the base substrate 10 and optionally formed to be in directcontact with the first drain sub-layer D1-1. The second source electrodeS2 is formed to fill in the third via V3, the second drain electrode D2is formed to fill in the fourth via V4.

In some embodiments, the first active layer ACT1 and the second activelayer ACT2 are formed as two different active layers selected from asilicon active layer and a metal oxide active layer. Optionally, thesilicon active layer is formed by a crystallization process convertingan amorphous silicon material into a polycrystalline silicon material.Optionally, an entire surface of the metal oxide active layer isprotected and unexposed during the crystallization process. Because thecrystallization process typically involves a high temperature annealingprocess, which would adversely affect the stability of the metal oxideactive layer and performance of the thin film transistor fabricated, ifa surface of the metal oxide active layer is exposed during thecrystallization process.

In one example, the first active layer ACT1 is formed as a metal oxideactive layer, and the second active layer ACT2 is formed as a siliconactive layer. The crystallization process for forming the second activelayer ACT2 may be performed, for example, in steps illustrated in FIG.2A or FIG. 2C, but not in the step illustrated in FIG. 2B (when thesurface of the first active layer ACT1 is partially exposed).

In one example, the second active layer ACT2 is formed as a metal oxideactive layer, and the first active layer ACT1 is formed as a siliconactive layer. The crystallization process for forming the second activelayer ACT2 may be performed, for example, in steps illustrated in FIGS.2A to 2C, but not in the step illustrated in FIG. 2D (when the surfaceof the second active layer ACT2 is partially exposed).

FIG. 3A illustrates regions of a first active layer in some embodimentsaccording to the present disclosure. Referring to FIG. 3A, a first viaV1 and a second via V2 respectively corresponding to a first sourceelectrode contact region SCR1 and a first drain electrode contact regionDCR1 of the first active layer ACT1 are formed to expose the firstsource electrode contact region SCR1 and the first drain electrodecontact region DCR1 of the first active layer ACT1. A first channelregion CR1 of the first active layer ACT1 is between the first sourceelectrode contact region SCR1 and the first drain electrode contactregion DCR1.

FIG. 3B illustrates regions of a second active layer in some embodimentsaccording to the present disclosure. Referring to FIG. 3B, a third viaV3 and a fourth via V4 respectively corresponding to a second sourceelectrode contact region SCR2 and a second drain electrode contactregion DCR2 of the second active layer ACT2 are formed to expose thesecond source electrode contact region SCR2 and the second drainelectrode contact region DCR2 of the second active layer ACT2. A secondchannel region CR2 of the second active layer ACT2 is between the secondsource electrode contact region SCR2 and the second drain electrodecontact region DCR2.

FIGS. 4A to 4I illustrate a method of fabricating an array substrate insome embodiments according to the present disclosure. FIGS. 5A to 5Iillustrate a method of fabricating an array substrate in someembodiments according to the present disclosure. Referring to FIGS. 4Ato 4I and 5A to 5I, the array substrate is fabricated on a basesubstrate 10 (e.g., a glass plate), a flexible base substrate 20 (e.g.,a polyimide substrate) on the base substrate 10, and a buffer layer 30on a side of the flexible base substrate 20 away from the base substrate10. In FIGS. 4A to 4I, the first active layer ACT1 is on a side of thesecond active layer ACT2 away from the base substrate 10. In FIGS. 5A to5I, the second active layer ACT2 is on a side of the first active layerACT1 away from the base substrate 10. Optionally, the plurality of firstthin film transistors 1 are metal oxide thin film transistors.Optionally, the plurality of first thin film transistors 1 arepolycrystalline silicon thin film transistors. Optionally, the pluralityof second thin film transistors 2 are metal oxide thin film transistors.Optionally, the plurality of second thin film transistors 2 arepolycrystalline silicon thin film transistors.

Optionally, the plurality of first thin film transistors 1 are in thedisplay area, and the plurality of second thin film transistors 2 are inthe peripheral area. Optionally, the plurality of first thin filmtransistors 1 are in the peripheral area, and the plurality of secondthin film transistors 2 are in the display area.

Optionally, the plurality of first thin film transistors 1 are drivethin film transistors (e.g., transistors connected to the power supplyline and to the light emitting diode) in an organic light emitting diodearray substrate. Optionally, the plurality of second thin filmtransistors 2 are switch thin film transistors (e.g., transistorsconnected to data lines and the gate electrode of the drive transistors,i.e., address selection thin film transistors) in an organic lightemitting diode array substrate. Optionally, the plurality of first thinfilm transistors 1 are switch thin film transistors (e.g., transistorsconnected to data lines and the gate electrode of the drive transistors,i.e., address selection thin film transistors) in an organic lightemitting diode array substrate. Optionally, the plurality of second thinfilm transistors 2 are drive thin film transistors (e.g., transistorsconnected to the power supply line and to the light emitting diode) inan organic light emitting diode array substrate.

In some embodiments, the first active layer ACT1 and the second activelayer ACT2 are formed in two different layers. In some embodiments, themethod further includes forming a first inter-layer dielectric layer 40and forming a second inter-layer dielectric layer 50. The firstinter-layer dielectric layer 40 is formed between the first active layerACT1 and the second active layer ACT2. The second inter-layer dielectriclayer 50 is formed on a side of the first active layer ACT1 and thesecond active layer ACT2 away from the base substrate 10.

Referring to FIG. 4A, a second active layer ACT2 is formed on the basesubstrate 10, a second gate insulating layer GI2 is formed on a side ofthe second active layer ACT2 away from the base substrate 10, a secondgate electrode G2 is formed on a side of the second gate insulatinglayer GI2 away from the second active layer ACT2, a first inter-layerdielectric layer 40 is formed on side of the second electrode G2 awayfrom the base substrate 10, a first active layer ACT1 is formed on aside of the first inter-layer dielectric layer 40 away from the basesubstrate 10, a first gate insulating layer GI1 is formed on a side ofthe first active layer ACT1 away from the base substrate 10, a firstgate electrode G1 is formed on a side of the first gate insulating layerGI1 away from the base substrate 10, and a second inter-layer dielectriclayer 50 is formed on a side of the first gate electrode G1 away fromthe base substrate 10. The first inter-layer dielectric layer 40 isformed on a side of the second active layer ACT2 away from the basesubstrate 10, the first active layer ACT1 is formed on a side of thefirst inter-layer dielectric layer 40 away from the base substrate 10,and the second inter-layer dielectric layer 50 is formed on a side ofthe first active layer ACT1 away from the base substrate 10.

Referring to FIG. 4B, a first via V1 and a second via V2 are formed torespectively extend through the second inter-layer dielectric layer 50during a first etching process to expose the first source electrodecontact region and the first drain electrode contact region of the firstactive layer ACT1.

Referring to FIG. 4C, a first source sub-layer S1-1 is formed to fill inthe first via V1 and a first drain sub-layer D1-1 is formed to fill inthe second via V2 to protect the first active layer ACT1, e.g., to coverup exposed surface of the first active layer ACT1.

Referring to FIG. 4D, subsequent to forming the first source sub-layerS1-1 and the first drain sub-layer D1-1, a third via V3 and a fourth viaV4 are formed to respectively extend through the first inter-layerdielectric layer 40, the second gate insulating layer GI2, and thesecond inter-layer dielectric layer 50 during a second etching processto expose the second source electrode contact region and the seconddrain electrode contact region of the second active layer ACT2.

Referring to FIG. 4E, a second source sub-layer S1-2, a second drainsub-layer D1-2, a second source electrode S2, and a second drainelectrode D2 are formed in a same patterning process and optionallyusing a same material and a single mask plate. The second sourceelectrode S2 is formed to fill in the third via V3, the second drainelectrode D2 is formed to fill in the fourth via V4. The second sourcesub-layer S1-2 is formed on a side of the first source sub-layer S1-1and electrically connected to the first source sub-layer S1-1. Thesecond drain sub-layer D1-2 is formed on a side of the first drainsub-layer D1-1 and electrically connected to the first drain sub-layerD1-1.

In some embodiments, the first active layer ACT1 is a metal oxide activelayer and the second active layer ACT2 is a silicon active layer.Optionally, subsequent to forming the first source sub-layer S1-1 andthe first drain sub-layer D1-1, the method further includes performing acrystallization process to convert an amorphous silicon material into apolycrystalline silicon material, thereby forming the second activelayer ACT2, while the first active layer ACT1 is protected in part bythe first source sub-layer S1-1 and the first drain sub-layer D1-1.

Optionally, the first source sub-layer S1-1 and the first drainsub-layer D1-1 are formed using a metallic material; and the secondsource sub-layer S1-2, the second drain sub-layer D1-2, the secondsource electrode S2, and the second drain electrode D2 are formed usinga metallic material. Optionally, the first source sub-layer S1-1, thefirst drain sub-layer D1-1, the second source sub-layer S1-2, the seconddrain sub-layer D1-2, the second source electrode S2, and the seconddrain electrode D2 are formed using a same metallic material.

Referring to FIG. 4F, a planarization layer 60 is formed on a side ofthe first source electrode S1, the first drain electrode D1, the secondsource electrode S2, and the second drain electrode D2 away from thebase substrate 10. A via is formed to extending through theplanarization layer 60 to expose a surface of the first drain electrodeD1.

Referring to FIG. 4G, a pixel electrode 70 is formed on a side of theplanarization layer 60 away from the base substrate 10. The pixelelectrode 70 is formed to be electrically connected to the first drainelectrode D1 through the via extending through the planarization layer60.

Referring to FIG. 4H, an insulating layer 80 is formed on a side of thepixel electrode 70 away from the base substrate 10.

Referring to FIG. 4I, a common electrode 90 is formed on a side of theinsulating layer 80 away from the base substrate 10.

Referring to FIG. 5A, a first active layer ACT1 is formed on the basesubstrate 10, a first gate insulating layer GI1 is formed on a side ofthe first active layer ACT1 away from the base substrate 10, a firstgate electrode G1 is formed on a side of the first gate insulating layerGI1 away from the first active layer ACT1, a first inter-layerdielectric layer 40 is formed on side of the first electrode G1 awayfrom the base substrate 10, a second active layer ACT2 is formed on aside of the first inter-layer dielectric layer 40 away from the basesubstrate 10, a second gate insulating layer GI2 is formed on a side ofthe second active layer ACT2 away from the base substrate 10, a secondgate electrode G2 is formed on a side of the second gate insulatinglayer GI2 away from the base substrate 10, and a second inter-layerdielectric layer 50 is formed on a side of the second gate electrode G2away from the base substrate 10. The first inter-layer dielectric layer40 is formed on a side of the first active layer ACT1 away from the basesubstrate 10, the second active layer ACT2 is formed on a side of thefirst inter-layer dielectric layer 40 away from the base substrate 10,and the second inter-layer dielectric layer 50 is formed on a side ofthe second active layer ACT2 away from the base substrate 10.

Referring to FIG. 5B, a first via V1 and a second via V2 are formed torespectively extend through the first inter-layer dielectric layer 40,the first gate insulating layer GI1, and the second inter-layerdielectric layer 50 during a first etching process to expose the firstsource electrode contact region and the first drain electrode contactregion of the first active layer ACT1.

Referring to FIG. 5C, a first source sub-layer S1-1 is formed to fill inthe first via V1 and a first drain sub-layer D1-1 is formed to fill inthe second via V2 to protect the first active layer ACT1, e.g., to coverup exposed surface of the first active layer ACT1.

Referring to FIG. 5D, subsequent to forming the first source sub-layerS1-1 and the first drain sub-layer D1-1, a third via V3 and a fourth viaV4 are formed to respectively extend through the second inter-layerdielectric layer 50 during a second etching process to expose the secondsource electrode contact region and the second drain electrode contactregion of the second active layer ACT2.

Referring to FIG. 5E, a second source sub-layer S1-2, a second drainsub-layer D1-2, a second source electrode S2, and a second drainelectrode D2 are formed in a same patterning process and optionallyusing a same material and a single mask plate. The second sourceelectrode S2 is formed to fill in the third via V3, the second drainelectrode D2 is formed to fill in the fourth via V4. The second sourcesub-layer S1-2 is formed on a side of the first source sub-layer S1-1and electrically connected to the first source sub-layer S1-1. Thesecond drain sub-layer D1-2 is formed on a side of the first drainsub-layer D1-1 and electrically connected to the first drain sub-layerD1-1.

In some embodiments, the first active layer ACT1 is a silicon activelayer and the second active layer ACT2 is a metal oxide active layer.Optionally, prior to forming the third via V3 and the fourth via V4, themethod further includes performing a crystallization process to convertan amorphous silicon material into a polycrystalline silicon material,thereby forming the first active layer ACT1, while the second activelayer ACT2 is protected by the second inter-layer dielectric layer 50.

Optionally, the first source sub-layer S1-1 and the first drainsub-layer D1-1 are formed using a metallic material; and the secondsource sub-layer S1-2, the second drain sub-layer D1-2, the secondsource electrode S2, and the second drain electrode D2 are formed usinga metallic material. Optionally, the first source sub-layer S1-1, thefirst drain sub-layer D1-1, the second source sub-layer S1-2, the seconddrain sub-layer D1-2, the second source electrode S2, and the seconddrain electrode D2 are formed using a same metallic material.

Referring to FIG. 5F, a planarization layer 60 is formed on a side ofthe first source electrode S1, the first drain electrode D1, the secondsource electrode S2, and the second drain electrode D2 away from thebase substrate 10. A via is formed to extending through theplanarization layer 60 to expose a surface of the second drain electrodeD2.

Referring to FIG. 5G, a pixel electrode 70 is formed on a side of theplanarization layer 60 away from the base substrate 10. The pixelelectrode 70 is formed to be electrically connected to the second drainelectrode D2 through the via extending through the planarization layer60.

Referring to FIG. 5H, an insulating layer 80 is formed on a side of thepixel electrode 70 away from the base substrate 10.

Referring to FIG. 5I, a common electrode 90 is formed on a side of theinsulating layer 80 away from the base substrate 10.

In another aspect, the present disclosure provides an array substrate.In some embodiments, the array substrate includes a plurality of firstthin film transistors and a plurality of second thin film transistors ona base substrate. A respective one of the plurality of first thin filmtransistors includes a first active layer, a first gate electrode, afirst source electrode and a first drain electrode. A respective one ofthe plurality of second thin film transistors includes a second activelayer, a second gate electrode, a second source electrode and a seconddrain electrode. The first source electrode includes a first sourcesub-layer and a second source sub-layer on a side of the first sourcesub-layer away from the base substrate. The first drain electrodeincludes a first drain sub-layer and a second drain sub-layer on a sideof the first drain sub-layer away from the base substrate. The firstsource sub-layer and the first drain sub-layer are in a same layer andmade of a same material. The second source sub-layer, the second drainsub-layer, the second source electrode, and the second drain electrodeare in a same layer and made of a same material. Optionally, the firstsource sub-layer and the first drain sub-layer are made of a firstmetallic material; the second source sub-layer, the second drainsub-layer, the second source electrode, and the second drain electrodeare made of a second metallic material different from the first metallicmaterial.

Optionally, the plurality of first thin film transistors are metal oxidethin film transistors. Optionally, the plurality of first thin filmtransistors are polycrystalline silicon thin film transistors.Optionally, the plurality of second thin film transistors are metaloxide thin film transistors. Optionally, the plurality of second thinfilm transistors are polycrystalline silicon thin film transistors.

Optionally, the plurality of first thin film transistors are in thedisplay area, and the plurality of second thin film transistors are inthe peripheral area. Optionally, the plurality of first thin filmtransistors are in the peripheral area, and the plurality of second thinfilm transistors are in the display area.

Optionally, the plurality of first thin film transistors are drive thinfilm transistors (e.g., transistors connected to the power supply lineand to the light emitting diode) in an organic light emitting diodearray substrate. Optionally, the plurality of second thin filmtransistors are switch thin film transistors (e.g., transistorsconnected to data lines and the gate electrode of the drive transistors,i.e., address selection thin film transistors) in an organic lightemitting diode array substrate. Optionally, the plurality of first thinfilm transistors are switch thin film transistors (e.g., transistorsconnected to data lines and the gate electrode of the drive transistors,i.e., address selection thin film transistors) in an organic lightemitting diode array substrate. Optionally, the plurality of second thinfilm transistors are drive thin film transistors (e.g., transistorsconnected to the power supply line and to the light emitting diode) inan organic light emitting diode array substrate.

In another aspect, the present disclosure provides a display panelhaving an array substrate described herein or fabricated by a methoddescribed herein, and a counter substrate facing the array substrate.Optionally, the display panel is a liquid crystal display panel.Optionally, the display panel is an organic light emitting diode displaypanel.

In another aspect, the present disclosure provides a display apparatushaving an array substrate described herein or fabricated by a methoddescribed herein, and one or more integrated circuits connected to thearray substrate. Optionally, the display apparatus is a liquid crystaldisplay apparatus. Optionally, the display apparatus is an organic lightemitting diode display apparatus. Examples of appropriate displayapparatuses include, but are not limited to, an electronic paper, amobile phone, a tablet computer, a television, a monitor, a notebookcomputer, a digital album, a GPS, etc.

The foregoing description of the embodiments of the invention has beenpresented for purposes of illustration and description. It is notintended to be exhaustive or to limit the invention to the precise formor to exemplary embodiments disclosed. Accordingly, the foregoingdescription should be regarded as illustrative rather than restrictive.Obviously, many modifications and variations will be apparent topractitioners skilled in this art. The embodiments are chosen anddescribed in order to explain the principles of the invention and itsbest mode practical application, thereby to enable persons skilled inthe art to understand the invention for various embodiments and withvarious modifications as are suited to the particular use orimplementation contemplated. It is intended that the scope of theinvention be defined by the claims appended hereto and their equivalentsin which all terms are meant in their broadest reasonable sense unlessotherwise indicated. Therefore, the term “the invention”, “the presentinvention” or the like does not necessarily limit the claim scope to aspecific embodiment, and the reference to exemplary embodiments of theinvention does not imply a limitation on the invention, and no suchlimitation is to be inferred. The invention is limited only by thespirit and scope of the appended claims. Moreover, these claims mayrefer to use “first”, “second”, etc. following with noun or element.Such terms should be understood as a nomenclature and should not beconstrued as giving the limitation on the number of the elementsmodified by such nomenclature unless specific number has been given. Anyadvantages and benefits described may not apply to all embodiments ofthe invention. It should be appreciated that variations may be made inthe embodiments described by persons skilled in the art withoutdeparting from the scope of the present invention as defined by thefollowing claims. Moreover, no element and component in the presentdisclosure is intended to be dedicated to the public regardless ofwhether the element or component is explicitly recited in the followingclaims.

What is claimed is:
 1. A method of fabricating an array substrate,comprising: forming a plurality of first thin film transistors on a basesubstrate, a respective one of the plurality of first thin filmtransistors formed to comprise a first active layer, a first gateelectrode, a first source electrode and a first drain electrode; andforming a plurality of second thin film transistors on the basesubstrate, a respective one of the plurality of second thin filmtransistors formed to comprise a second active layer, a second gateelectrode, a second source electrode and a second drain electrode;wherein forming the first source electrode comprises forming a firstsource sub-layer and forming a second source sub-layer in separatepatterning steps; forming the first drain electrode comprises forming afirst drain sub-layer and forming a second drain sub-layer in separatepatterning steps; the first source sub-layer and the first drainsub-layer are formed in a same layer using a same material in a samepatterning process and using a single mask plate; and the second sourcesub-layer, the second drain sub-layer, the second source electrode, andthe second drain electrode are formed in a same layer using a samematerial in a same patterning process and using a single mask plate;wherein the first active layer and the second active layer are formed indifferent layers; an entire surface of the second active layer isprotected and unexposed during a first etching process to expose a firstsource electrode contact region and a first drain electrode contactregion of the first active layer; and an entire surface of the firstactive layer is protected and unexposed during a second etching processto expose a second source electrode contact region and a second drainelectrode contact region of the second active layer.
 2. The method ofclaim 1, wherein the entire surface of the first active layer isunexposed and protected in part by the first source sub-layer and thefirst drain sub-layer during the second etching process; and the entiresurface of the second active layer is unexposed and protected by aninsulating material during the first etching process.
 3. The method ofclaim 1, wherein the first etching process is performed prior to thesecond etching process.
 4. The method of claim 1, wherein the firstactive layer and the second active layer are formed as two differentactive layers selected from a silicon active layer and a metal oxideactive layer; the silicon active layer is formed by a crystallizationprocess converting an amorphous silicon material into a polycrystallinesilicon material; and an entire surface of the metal oxide active layeris protected and unexposed during the crystallization process.
 5. Themethod of claim 1, wherein the first active layer and the second activelayer are formed in two different layers; the method further comprisingforming a first inter-layer dielectric layer and forming a secondinter-layer dielectric layer; the first inter-layer dielectric layer isformed between the first active layer and the second active layer; andthe second inter-layer dielectric layer is formed on a side of the firstactive layer and the second active layer away from the base substrate.6. The method of claim 5, comprising: forming a first via and a secondvia during the first etching process to expose the first sourceelectrode contact region and the first drain electrode contact region ofthe first active layer; forming the first source sub-layer filling inthe first via and the first drain sub-layer filling in the second via toprotect the first active layer; subsequent to forming the first sourcesub-layer and the first drain sub-layer, forming a third via and afourth via during the second etching process to expose the second sourceelectrode contact region and the second drain electrode contact regionof the second active layer; and forming the second source sub-layer, thesecond drain sub-layer, the second source electrode, and the seconddrain electrode in a same patterning process, the second sourceelectrode formed to fill in the third via, the second drain electrodeformed to fill in the fourth via.
 7. The method of claim 6, wherein thefirst inter-layer dielectric layer is formed on a side of the secondactive layer away from the base substrate; the first active layer isformed on a side of the first inter-layer dielectric layer away from thebase substrate; and the second inter-layer dielectric layer is formed ona side of the first active layer away from the base substrate.
 8. Themethod of claim 7, comprising: forming a first via and a second viarespectively extending through the second inter-layer dielectric layerduring the first etching process to expose the first source electrodecontact region and the first drain electrode contact region of the firstactive layer; forming the first source sub-layer filling in the firstvia and the first drain sub-layer filling in the second via to protectthe first active layer; subsequent to forming the first source sub-layerand the first drain sub-layer, forming a third via and a fourth viarespectively extending through the first inter-layer dielectric layerand the second inter-layer dielectric layer during the second etchingprocess to expose the second source electrode contact region and thesecond drain electrode contact region of the second active layer; andforming the second source sub-layer, the second drain sub-layer, thesecond source electrode, and the second drain electrode in a samepatterning process, the second source electrode formed to fill in thethird via, the second drain electrode formed to fill in the fourth via.9. The method of claim 8, wherein the first active layer is a metaloxide active layer and the second active layer is a silicon activelayer; and subsequent to forming the first source sub-layer and thefirst drain sub-layer, the method further comprises performing acrystallization process to convert an amorphous silicon material into apolycrystalline silicon material, thereby forming the second activelayer.
 10. The method of claim 6, wherein the first inter-layerdielectric layer is formed on a side of the second active layer awayfrom the base substrate; the first active layer is formed on a side ofthe first inter-layer dielectric layer away from the base substrate; andthe second inter-layer dielectric layer is formed on a side of the firstactive layer away from the base substrate.
 11. The method of claim 10,comprising: forming a first via and a second via respectively extendingthrough the first inter-layer dielectric layer and the secondinter-layer dielectric layer during the first etching process to exposethe first source electrode contact region and the first drain electrodecontact region of the first active layer; forming the first sourcesub-layer filling in the first via and the first drain sub-layer fillingin the second via to protect the first active layer; subsequent toforming the first source sub-layer and the first drain sub-layer,forming a third via and a fourth via respectively extending through thesecond inter-layer dielectric layer during the second etching process toexpose the second source electrode contact region and the second drainelectrode contact region of the second active layer; and forming thesecond source sub-layer, the second drain sub-layer, the second sourceelectrode, and the second drain electrode in a same patterning process,the second source electrode formed to fill in the third via, the seconddrain electrode formed to fill in the fourth via.
 12. The method ofclaim 11, wherein the first active layer is a silicon active layer andthe second active layer is a metal oxide active layer; and prior toforming the third via and the fourth via, the method further comprisesperforming a crystallization process to convert an amorphous siliconmaterial into a polycrystalline silicon material, thereby forming thefirst active layer.
 13. The method of claim 1, wherein the respectiveone of the plurality of first thin film transistors and the respectiveone of the plurality of second thin film transistors are formed as twodifferent thin film transistors selected from a silicon thin filmtransistor and a metal oxide thin film transistor; and the metal oxidethin film transistor is formed in a display area of the array substrate,and the silicon thin film transistor is formed in a peripheral area ofthe array substrate.
 14. The method of claim 1, wherein the respectiveone of the plurality of first thin film transistors and the respectiveone of the plurality of second thin film transistors are formed as twodifferent thin film transistors selected from a silicon thin filmtransistor and a metal oxide thin film transistor; the silicon thin filmtransistor is formed as a drive thin film transistor electricallyconnected to a power supply line and an organic light emitting diode;and the metal oxide thin film transistor is formed as a switch thin filmtransistor electrically connected to a data line and a gate electrode ofthe silicon thin film transistor.
 15. The method of claim 1, wherein thefirst active layer is a metal oxide active layer, and the second activelayer is a silicon active layer.
 16. The method of claim 1, wherein thefirst active layer is a silicon active layer, and the second activelayer is a metal oxide active layer.
 17. The method of claim 1, whereinthe first source sub-layer and the first drain sub-layer are formedusing a metallic material; and the second source sub-layer, the seconddrain sub-layer, the second source electrode, and the second drainelectrode are formed using a metallic material.